METHOD MAKING AN ULTRA HIGH DENSITY DRAM CELL WITH STACKED CAPACITOR

摘要

An ultra high integration DRAM cell and a method of manufacturing therefor are provided which increases the capacitance of the cell capacitor. The plate electrode consists of the second and fourth polycrystalline silicon layers; the storage electrode consists of the third polycrystalline silicon layer; the dielectric layer is increased by the area of the first dielectric layer.