| 摘要 |
PURPOSE:To prevent the generation of defective short circuit of a device induced by packaging by using a non-wettability material for a deposited metal and keeping a deposited region of a heat sink or a bonding surface on a submount side so wide that it may not protrude from the die bonding surface of the semiconductor laser chip. CONSTITUTION:A die bonding side of a Si submount 2 and a semiconductor chip 3 is partially treated with a deposited metal-pattern 4 while other regions are treated with Sipatterns. The area of the deposited metal pattern 4 is smaller than the die bonding side of the semiconductor laser chip 3. For example, when the semiconductor laser chip is 250mumX400mum in size (length X width of oscillator), the deposited metal pattern 4 will be 200mumX350mum. It is possible to form the deposited metal pattern 4 based on a lift-off process or the like. More specifically, the deposited metal pattern 4 can be formed by forming an opening section in the region of the pattern 4 by photoresist and deposited metal by deposition or the like and removing the deposited metal on the photoresist together with the photoresist by an organic solution.
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