| 摘要 |
PURPOSE:To enable a MOS transistor using an ultra-thin film single crystal silicon layer with an good crystallization and a uniform film thickness by forming an extremely thin-film single crystal silicon layer by combining the application method and the SIMOX method for enabling the film thickness to be controlled easily. CONSTITUTION:An oxide film 2 is formed on a single crystal silicon substrate 1, oxygen ion implantation and heat treatment are performed, an oxide film layer 3 is formed, and a single crystal silicon thin film 4 is formed. Then, a p-type single crystal silicon substrate 5 is subjected to heat treatment, an oxide film layer 6 is formed, and a surface of the single crystal silicon thin film 4 is applied to the single crystal substrate 5. Then, the single crystal substrate 1 where oxygen ion implantation was performed and the oxide film layer 3 are eliminated and then the single crystal silicon thin film 4 is made thinner by oxidation and fluoric acid aqueous solution treatment. Further, a single crystal silicon thin film at areas other than an element formation region is selectively eliminated by the photo etching process. |
