| 摘要 |
<p>PURPOSE:To improve high frequency response characteristics by using ordinary conductive metal for one electrode, and using superconductive metal for the other electrode and wiring to this electrode. CONSTITUTION:Ordinary conductive metal is used for a lower electrode 1 of a cold cathode 4, and superconductive metal is used for an upper electrode 2 and wiring 6 thereof. When a potential difference is given to the lower electrode 1 and the upper electrode 2 by an electric power source 8, the electron tunnels from the electrode 1 to the electrode 2. When a potential difference larger than that of the electric power source 8 is given the an electric power source 9, in the case that the electrode 2 is very thin, a part of the tunneled electron is led to a collector 7 to fly out to the vacuum, and is gathered by the collector 7. Under this condition, when the input signal is sent to the electrode 2, the number of the electron flying out to the vacuum is changed, and the collector current is modified to operate a transistor. With this structure, since resistance of the electrode 2 and the wiring 6 is 0, delay of response to the high frequency input signal to the cathode 4 is eliminated.</p> |
