| 摘要 |
PURPOSE: To produce arsenic, containing film by thermally growing a vapor organic arsenic compound on a heating substrate or to set a doping method for leading arsenic atoms into the substrate. CONSTITUTION: In the process of organometallic chemical vapor-phase method (MOCVD) for growing arsenic-containing film, especially polyarsine of one organic arsine compound at least having As-Aa bounding, a compound having diarsine and the arsenic ring of five or six arsenic atoms is used.
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