SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE: To overlap or cross electric mutual connection with enclosed conductive areas (101 and 102) by contacting an electric conductive area, without the need for forming a contact opening passed through a coated insulating area. CONSTITUTION: A semiconductor substrate forms at least one active element. In an example shown in Figure 1, complementary (n)-channel and (p)-channel IGFETs (10 and 20) are provided. The electric conductive regions for forming gate conductive regions (101 and 102) of the insulating gate of one IGFET is formed on a first main surface of the semiconductor substrate and enclosed inside the coated insulating region. A section (100a) of the electric conductive regions (101 and 102) forms electric contact with the electric conductive regions (101 and 102) through a conductor track (205), provided on the first main surface and a relatively highly-doped semiconductor area provided adjacently to the first main surface, and a conductive passage formed by the relatively highly doped semiconductor area is provided.