FABRICATION OF ALUMINUM-CONTAINING SEMICONDUCTOR DEVICES

摘要

FABRICATION OF ALUMINUM-CONTAINING SEMICONDUCTOR DEVICES Processes for introduction of aluminum during MetalOrganic Molecular Beam Epitaxy are dependent upon specification of source materials for yielding the aluminum. A major obstacle to use of this excellent growth process, particularly as applied to a major class of compound semiconductor devices, is thereby overcome.Expeditious growth of high quality materials within the direct bandgap AlGaAs composition range has broad implications as concerning LSI/VLSI integrated circuits - electronic, photonic, as well as hybrid.