| 摘要 |
PURPOSE:To provide an alignment method which enables a highly accurate alignment between a semiconductor wafer and a mask in photolithography in the manufacturing process of a semiconductor device. CONSTITUTION:From the center of the wafer mark 11-2 made by the etching in a first process and the center 13-1 made by the etching in the second process, the center 23 of the composite alignment mark of the wafer mark 11-2 by the first process and the wafer mark 13-1 by the second process is calculated, and on the basis of this, the alignment of the mask in the next process is performed. Hereby, the quantity of deviation is not accumulated, and highly accurate alignment can be performed. |
