| 摘要 |
PURPOSE: To provide a turn-off thyristor in which a thermal breakdown on turn-off can be positively avoided and a resistance element to be used does not increase a voltage to be dropped in forward state of the thyristor. CONSTITUTION: The emitter of a thyristor is divided into a number of emitter regions 2. An electrode 11 is arranged adjacent to each emitter region, and a break current path flows from a base whose boundary is in contact with the emitter regions 2 to a main terminal 8 of the thyristor via a first field effect transistor T1. Further, each emitter region 2 is connected to the main terminal 8 via a second field effect transistor T2, that is integrated into a semiconductor substrate 1 of the thyristor or is manufactured by a thin-film method. |
