发明名称 |
Piezoresistive semiconductor device suitable for use in a pressure sensor |
摘要 |
A piezoresistive device, in which separation grooves having a cross section defined by four (111) planes and including side walls of a silicon oxide film are formed in a surface area of a semiconductor substrate having a surface of (100) plane, and at least one piezoresistor having an inversed triangular cross section defined by one (100) plane and two (111) planes is formed in the surface area of the semiconductor substrate and is surrounded by the separation grooves for separating the piezoresistor from the semiconductor substrate.
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申请公布号 |
US5172205(A) |
申请公布日期 |
1992.12.15 |
申请号 |
US19900586774 |
申请日期 |
1990.09.24 |
申请人 |
NISSAN MOTOR CO., LTD. |
发明人 |
FRENCH, PATRICK J.;SHINOHARA, TOSHIRO |
分类号 |
G01P15/08;G01P15/12;H01C10/10 |
主分类号 |
G01P15/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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