发明名称 |
READER FOR EPROM MEMORY CELL HAVING OPERATION FIELD INDEPENDENT FROM JUMP OF THRESHOLD TO CELL NOT WRITTEN OF WRITTEN CELL |
摘要 |
PURPOSE: To hold a gate-source voltage at a specific constant value by using the reading device which is independent of the threshold value jump of the cell where the operation field is written. CONSTITUTION: This device is equipped with a source bias generator 4 which holds the voltage between the gate and source of an EPROM cell 2 constant by applying a source voltage varying linearly together with a source voltage to the EPROM cell 2 during a period of a read step. |
申请公布号 |
JPH056682(A) |
申请公布日期 |
1993.01.14 |
申请号 |
JP19910164266 |
申请日期 |
1991.07.04 |
申请人 |
SGS THOMSON MICROELETTRONICA SPA |
发明人 |
MARUKO DARABOORA;PAORO ROORANDEI;MARUKO MATSUKAARI |
分类号 |
G11C17/00;G11C16/06;G11C16/28 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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