发明名称 READER FOR EPROM MEMORY CELL HAVING OPERATION FIELD INDEPENDENT FROM JUMP OF THRESHOLD TO CELL NOT WRITTEN OF WRITTEN CELL
摘要 PURPOSE: To hold a gate-source voltage at a specific constant value by using the reading device which is independent of the threshold value jump of the cell where the operation field is written. CONSTITUTION: This device is equipped with a source bias generator 4 which holds the voltage between the gate and source of an EPROM cell 2 constant by applying a source voltage varying linearly together with a source voltage to the EPROM cell 2 during a period of a read step.
申请公布号 JPH056682(A) 申请公布日期 1993.01.14
申请号 JP19910164266 申请日期 1991.07.04
申请人 SGS THOMSON MICROELETTRONICA SPA 发明人 MARUKO DARABOORA;PAORO ROORANDEI;MARUKO MATSUKAARI
分类号 G11C17/00;G11C16/06;G11C16/28 主分类号 G11C17/00
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