发明名称 TREATMENT MEMBER FOR SEMICONDUCTOR USE
摘要 <p>PURPOSE:To enhance the corrosion resistance of a treatment member for semiconductor use such as a susceptor or the like and to ensure the flatness of the treatment member. CONSTITUTION:A treatment member for semiconductor use is provided with the following: a base material 1 having a prescribed shape; and a fine crystalline SiC layer 3 and a coarse crystalline SiC layer 2 which have been laminated and formed on the base material 1. It is featured in such a way that an intermediate layer 4 in which the continuity of a crystal structure is scarce is provided between the fine crystalline SiC layer 3 and the coarse crystalline SiC layer 2.</p>
申请公布号 JPH056862(A) 申请公布日期 1993.01.14
申请号 JP19910180439 申请日期 1991.06.26
申请人 TOSHIBA CERAMICS CO LTD 发明人 OHASHI TADASHI;SOTODANI EIICHI;ITO YUKIO;TAZOE HARUO;SUMIYA MASAYUKI
分类号 C30B25/12;H01L21/22;H01L21/68;H01L21/683 主分类号 C30B25/12
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