发明名称 |
TREATMENT MEMBER FOR SEMICONDUCTOR USE |
摘要 |
<p>PURPOSE:To enhance the corrosion resistance of a treatment member for semiconductor use such as a susceptor or the like and to ensure the flatness of the treatment member. CONSTITUTION:A treatment member for semiconductor use is provided with the following: a base material 1 having a prescribed shape; and a fine crystalline SiC layer 3 and a coarse crystalline SiC layer 2 which have been laminated and formed on the base material 1. It is featured in such a way that an intermediate layer 4 in which the continuity of a crystal structure is scarce is provided between the fine crystalline SiC layer 3 and the coarse crystalline SiC layer 2.</p> |
申请公布号 |
JPH056862(A) |
申请公布日期 |
1993.01.14 |
申请号 |
JP19910180439 |
申请日期 |
1991.06.26 |
申请人 |
TOSHIBA CERAMICS CO LTD |
发明人 |
OHASHI TADASHI;SOTODANI EIICHI;ITO YUKIO;TAZOE HARUO;SUMIYA MASAYUKI |
分类号 |
C30B25/12;H01L21/22;H01L21/68;H01L21/683 |
主分类号 |
C30B25/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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