发明名称 SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To increase the data quantity to be stored in comparison with the number of storage element by storing the data of plural bits in one storing element. CONSTITUTION:The respective on resistances of plural storage elements 1a connected to bit lines 2a-2d and word lines 3a-3b are set at a different value and inverters 4a, 4b, 4c, 4d being different from the transition points are provided with respective branch lines of the bit line 2a and the encoder 12 being connected to those, are provided between each bit line 2a and ROM output data lines 6a, 6b. In the encoder 12, a data read-out circuit 10 providing with a bit enable signal line 13 inputting a bit enable signal after the specified time, after a data read-out signal is outputted, is provided.</p>
申请公布号 JPH0528776(A) 申请公布日期 1993.02.05
申请号 JP19910179162 申请日期 1991.07.19
申请人 MITSUBISHI DENKI ENG KK;MITSUBISHI ELECTRIC CORP 发明人 TAKIGAWA HIROSHI
分类号 G11C16/04 主分类号 G11C16/04
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