METHOD OF MANUFACTURING MOS INTEGRAL CIRCUIT WITH POLYSILICON RESISTORS,申请号SU19894638963-传众专利搜索

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发明名称	METHOD OF MANUFACTURING MOS INTEGRAL CIRCUIT WITH POLYSILICON RESISTORS
摘要
申请公布号	RU1609399(C)	申请公布日期	1993.03.07
申请号	SU19894638963	申请日期	1989.01.19
申请人	IVANKOVSKIJ M.M.,SU;AGRICH YU.V.,SU	发明人	IVANKOVSKIJ M.M.,SU;AGRICH YU.V.,SU
分类号	H01L21/8232;H01L21/82	主分类号	H01L21/8232
代理机构		代理人
主权项
地址

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