发明名称 TARGET ELEMENT FOR CATHODE SPUTTERING
摘要 <p>The target element (2) is formed from an inorganic compound layer (16) with a melting point above 300 °C deposited on a foam or metallic felt support layer such that the layer of inorganic compound sinks to part of its depth into the support layer to define a composite layer (17). In order to form the target element, a precursor system of the inorganic compound is applied to the support layer, the assembly so formed is subjected to a pressure of between 0.1 MPa and 15 MPa, the resulting assembly is maintained at between 300 °C and 1600 °C and below the melting temperature of the support in order to obtain a sintered assembly. Said assembly is then cooled to an ambient temperature avoiding any sudden cooling. In order to produce the target, the element (2) is glued to a metallic substrate (4) using a conductive adhesive.</p>
申请公布号 WO1993005195(A1) 申请公布日期 1993.03.18
申请号 FR1992000835 申请日期 1992.09.01
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