| 摘要 |
<p>PURPOSE:To enable an attracted wafer to be sharply lessened in time required for increase or decrease in temperature as compared with a conventional one by a method wherein a flat plate-like or foil-like heating body of resistance heating material to heat the attracted object is buried in parallel with an insulating layer in an insulating substance where an attracting electrode is buried. CONSTITUTION:A flat plate-like or foil-like heating body 12 of resistance heating material is buried in the rear side of a flat attracting electrode 11 in parallel with an insulating layer 14 apart form the electrode 11 by an insulating space equivalent to the thickness of the insulating layer 14. On the other hand, the attracting electrode 11 is composed of two electrodes formed on a plane, and the electrodes are connected to the positive and the negative electrode of a direct current power supply, whereby an electrostatic attracting force is generated between the electrodes and a wafer 5. By this setup, a distance between a heating body and an attracted object can be reduced to an irreducible minimum, so that a wafer can be made to rise to a target temperature in a very short time when a film is formed on the wafer. A wafer can be reduced in temperature in a very short time when the temperature of the wafer exceeds a prescribed value after a film starts to be formed.</p> |
