| 摘要 |
<p>PURPOSE:To provide a phase shift mask and its production method to improve the accuracy and controlling the property of a pattern after exposure. CONSTITUTION:This phase shift mask has the following mask patterns on one supporting body 1. They are Levenson type phase shift mask pattern 5 construction, a phase shift mask pattern 6 in which the profile pattern of light intensity is formed only with this shifter, and an edge-enhanced type phase shifter mask pattern 7. On the supporting body 1, there are successively formed the shifter layer 2, light-shielding layer 3 and photoresist layer 4, and these layers are exposed by multicontrast method, then developed and etched to obtain the mask.</p> |
