| 摘要 |
PURPOSE:To obtain a polycrystalline silicon semiconductor film having uniform crystalline grains by periodically providing recesses on a board, securing fine powder of silicon to the recesses, forming amorphous silicon thereon and heating to crystallize it. CONSTITUTION:A glass board 1 is first coated with resist 2 to form a predetermined pattern. The board 1 is etched, and the resist is further removed to form recesses. The recesses are provided like crosses of a 'go' board (or a checkerboard) in a matrix state of a predetermined interval. Then, fine powder of silicon having substantially the same size as the recesses is dissolved in organic solvent, the board 1 is coated with the solution, and the solvent is evaporated by heat to secure the powder to the recesses. Here, an amorphous silicon semiconductor film is formed on the board. Thus, a polycrystalline silicon semiconductor film having uniform crystalline grains can be obtained. |
