| 摘要 |
PURPOSE:To obtain an n-type semiconductor thin film having crystallinity in an extremely thin film state and a high carrier density, low optical absorption so as to enhance the performance of an amorphous solar cell. CONSTITUTION:A step of forming a thin film while irradiating a grown surface with ions generated by discharging including gas of hydrogen carbide or organic silicon compound and a step of irradiating only with ions are repeated to obtain a crystalline semiconductor thin film in which the thickness of the film formed by the one repetition of the respective steps is a range of 1 to 100Angstrom and the entire thickness is 300Angstrom or less. Thus, a crystalline semiconductor thin film having a high carrier density and a thickness of 300Angstrom or less and which was impossible according to conventional technique can be formed. The thin film is applied to the conductive thin film of an amorphous solar cell thereby to improve a photoelectric conversion efficiency. |
