VERFAHREN ZUR HERSTELLUNG EINES PN-UEBERGANGS HOHER SPANNUNGSFESTIGKEIT.

摘要

Prodn. of a high voltage resistant pn-junction, which runs parallel to the boundary face (1a) of a doped semiconductor body (1) of first conductivity type, separates a second conductivity type region (10) from the remainder of the semiconductor body (1) and approaches the boundary face (1a) at its edge region, involves introducing a dopant through boundary face (1a) to produce the second type region (10) and tempering to diffuse part of the dopant material deeper into the semiconductor body. The novelty is that the dopant is introduced into a zone (2) outward of the boundary face (1a) and that this zone (2) is provided with one or more projecting strips (4-7) by photolithography and subsequent masked etching steps, prior to tempering, one (7) of these stripes running along the lateral boundary (2a) of the zone (2) and the opt. present other stripes (4-6) running at a constant spacing from this lateral boundary (2a).