| 摘要 |
<p>PURPOSE:To provide a ZnO chip varistor which is hard to be influenced by flux and whose varistor voltage is hard to fluctuate. CONSTITUTION:First of all, ZnO varistor material powder granulated with polyvinyl alcohol added is pressure-welded with a metallic mold, and binder removal is performed at 400 deg.C for 2 hours. Next this is baked at 1,200 deg.C for 2 hours in the atmosphere to obtain a columnar ZnO ceramic 1 with a diameter of 1.15mm and a height of 2.00mm. Then epoxy resin 2 is applied to the center part of the surface of the ceramic 1 by a breadth of 0.50mm and a thickness of 25mum rotating the column, and dried at 200 deg.C. Next electrolytic nickel plating processing is performed to the part where the epoxy resin 2 is not applied, and a nickel electrode 3 of film thickness 10mum is formed. Then the epoxy resin 2 is applied again to the center part of the surface by a breadth of 1.00mm and a thickness of 25mum rotating the column, and dried at 200 deg.C. Lastly, electrolytic solder plating is performed on to the nickel electrode 3, and the electrode 3 is covered with solder 4.</p> |
