发明名称 Grain boundary Josephson element - formed on textured silicon@ substrate having thin auxiliary layer with intermediate layer formed on edge
摘要 Grain boundary Josephson element (I) is formed on a textured substrate, whose surface has a thin auxillary layer. An intermediate layer is formed on the edge of the auxillary layer and producing a transition zone. The crystal axes are directed differently to the transition zone. A conducting piece extends over the transition zone and forms a boundary region, the conducting piece being made of a metal oxide high temp. superconductor, in which the crystal axes run in the plane of the conductor piece on both sides of the boundary region to form a grain boundary in this region. A substrate (3) made of Si and having (100) orientation is used. The auxillary layer (4) and the intermediate layer (6) are made of cubic Y2O3 or Y-stabilised ZrO2 or vice versa. On the part of the Y2O3 layer lying on the substrate the crystal axes are rotated in the layer plane opposite the corresponding axes of the substrate, whilst the direction of the crystal axes of the Y-stabilised ZrO2 layer is the same as the direction of the corresponding crystal axes of each base. ADVANTAGE - A high current density is produced.
申请公布号 DE4141228(A1) 申请公布日期 1993.06.17
申请号 DE19914141228 申请日期 1991.12.13
申请人 SIEMENS AG, 8000 MUENCHEN, DE 发明人 WECKER, JOACHIM, DIPL.-PHYS. DR., 8520 ERLANGEN, DE;MATTHEE, THORSTEN, DIPL.-PHYS., 8500 NUERNBERG, DE
分类号 B32B18/00;H01L39/22 主分类号 B32B18/00
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