| 摘要 |
<p>PURPOSE:To provide the manufacturing method of liquid crystal display unit capable of settling the problem posed by free bond of silicon existing in a polysilicon thin film while enhancing the operational characteristics of a switching transistor further diminishing the with-time deterioration therein. CONSTITUTION:Within the manufacturing method of an active matrix type liquid crystal display unit wherein a picture element region is made to comprise a data wire, a gate wire, a switching transistor and a picture element electrode is formed on a quartz glass substrate 11 and then a driving circuit is formed in the peripheral part of this picture element region, after the formation of a polysilicon thin film 14 on the glass substrate 11, a part to be the picture element region of this polysilicon thin film 14 is implanted with fluorine ions. Next, after the termination of an element formation step requiring of heat treatment, the polysilicon thin film 14 is exposed to hydrogen plasma so as to be doped with hydrogen.</p> |
