| 摘要 |
<p>PURPOSE:To electrically segregate an n-type semiconductor layer without provision of any blocking layer over the i-type semiconductive layer of a thin film transistor and without giving damage to channel region of the i-type semiconductor layer. CONSTITUTION:The end of each picture element electrode 12a is interposed between a source electrode S and a source side contact layer 17 situated below it, and a conductive layer 12b consisting of a clear conductive film 12 in the same manner as the picture element electrode 12a is installed between a drain electrode D and a drain side contact layer 17 situated below it, wherein the two contact layers 17 on the source side and drain side are formed in the same shape as the conductive layer 12b and the end of each picture element electrode 12a, and the part between the source and drain electrodes S, D of n-type semiconductor 16 is made an oxide insulative layer 16a where the whole over the layer thickness was oxidated.</p> |
