| 摘要 |
<p>PURPOSE:To realize a charge pumping circuit which can supply a sufficiently high VPP level to a VPP terminal of a semiconductor memory. CONSTITUTION:A transistor Q24 for charging a charge pump capacity in a capacitor C26 is forcibly turned ON by a driving circuit 20 having an inverter 120A, a transistor Q27 connected to the inverter 120A via a node 31, and a capacitor C30 connected at one end side to a terminal 22 and at the other to a gate of the transistor Q24 through a node 32. More particularly, the transistor Q24 is forcibly turned ON by a gate punch through capacity of a capacitor C33 to be charged by the transistor Q27 to be controlled by the inverter 120A. Thus, the capacitor C26 can be sufficiently charged.</p> |
