| 摘要 |
<p>PURPOSE:To facilitate ending of etching and to surely execute the etching by previously providing an amorphous silicon film for detecting the end point of the etching in a part under an intermediate insulating film to be bored with a contact hole. CONSTITUTION:The contact hole 20 is formed in the part covering both of a source electrode 17 and the amorphous silicon films 15, 16 and the end point of the etching of the contact hole 20 is detected from that the amorphous silicon films 15, 16 are etched, at the time of successively forming a gate electrode 12, a gate insulating film 13 and the amorphous silicon films 15, 16 on an insulating substrate 11 consisting of glass, forming a source electrode 17 shorter in a width size than the amorphous silicon films on these films, forming an intermediate insulating film 19 thereon and forming the contact hole 20 in the intermediate insulating film in the process for production of the amorphous silicon thin- film transistor array to be formed on the substrate.</p> |
