| 摘要 |
<p>PURPOSE: To obtain a novel phase shift mask used for production of a semiconductor device. CONSTITUTION: A phase shift mask 24 has pattern layers 26 contg. prescribed patterns which are the structures of desired semiconductors and the structures of the semiconductors are formed as the plural spaces of the pattern layers. Films 27 of an equal shape are applied in order to form phase shift regions 32, 36, 37 within the prescribed distances between the respective spaces. The coatings of the equal shape form the two regions 31, 32 respectively having different thicknesses. The phase of the light passing the thick regions or the phase shift regions is shifted with respect to the light passing the thin regions 32.</p> |
