发明名称 HIGH-TC SUPERCONDUCTOR-GALLATE CRYSTAL STRUCTURES
摘要 High-Tc oxide superconductive structures (22, 24) can be formed on gallate layers (18, 20), where the gallate layers (18, 20) include a rare earth element or a rare earth-like element. Combinations of rare earth elements and rare earth-like elements can also be utilized. 'The superconductive films can be epitaxially deposited on these gallate layers to form single crystals or, in the minimum, highly oriented superconductive layers. Any high-Tc superconductive oxide material can be utilized, but the best lattice matches are to superconductive materials including copper oxides. Examples include Y-Ba-Cu-O systems, Bi-based systems and Tl-based systems.
申请公布号 EP0345441(B1) 申请公布日期 1993.08.18
申请号 EP19890106765 申请日期 1989.04.15
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 GALLAGHER, WILLIAM JOSEPH;GIESS, EDWARD AUGUST;GUPTA, ARUNAVA;LAIBOWITZ, ROBERT BENJAMIN;O'SULLIVAN, EUGENE JOHN M.;SANDSTROM, ROBERT LEE
分类号 C01G3/00;C01B13/14;C01G1/00;C04B41/89;C30B23/02;C30B25/18;C30B29/22;H01B12/06;H01B13/00;H01L39/14;H01L39/22;H01L39/24;H01P3/08 主分类号 C01G3/00
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