发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device comprises a first pad region (upper 11) applied with a first potential (GND), a first line (12) led from the first pad region (upper 11) and connected to a first circuit (13), a second pad region (lower 11) integrated with the first pad region (upper 11) and applied also with the first potential, and a second line (14) led from the second pad region (lower 11) connected to a second circuit (15) and overlapped with the first line (12).
申请公布号 KR930009022(B1) 申请公布日期 1993.09.18
申请号 KR19900005895 申请日期 1990.04.26
申请人 TOSHIBA CO., LTD. 发明人 MATSUO, KENJI;NONAKA, TADASHI;TSUCHIYA, IKUO
分类号 H01L21/3205;H01L21/60;H01L21/768;H01L23/52;H01L23/522;H01L23/528;(IPC1-7):H01L23/528;H01L21/90 主分类号 H01L21/3205
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