发明名称 | 窒化物単結晶の製造方法 | ||
摘要 | PROBLEM TO BE SOLVED: To evaluate crystal quality of a nitride single crystal, in an untouched as-grown state, grown by the ammonothermal process.SOLUTION: The nitride single crystal is grown in a reaction vessel at a grow temperature of ≥500°C, the grown nitride single crystal is subjected to surface treatment while lowering the temperature from the grow temperature, and the surface of the surface-treated nitride single crystal is evaluated. | ||
申请公布号 | JP6051768(B2) | 申请公布日期 | 2016.12.27 |
申请号 | JP20120232984 | 申请日期 | 2012.10.22 |
申请人 | 三菱化学株式会社 | 发明人 | 藤澤 英夫;三川 豊;鎌田 和典 |
分类号 | C30B29/38 | 主分类号 | C30B29/38 |
代理机构 | 代理人 | ||
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