发明名称 窒化物単結晶の製造方法
摘要 PROBLEM TO BE SOLVED: To evaluate crystal quality of a nitride single crystal, in an untouched as-grown state, grown by the ammonothermal process.SOLUTION: The nitride single crystal is grown in a reaction vessel at a grow temperature of ≥500°C, the grown nitride single crystal is subjected to surface treatment while lowering the temperature from the grow temperature, and the surface of the surface-treated nitride single crystal is evaluated.
申请公布号 JP6051768(B2) 申请公布日期 2016.12.27
申请号 JP20120232984 申请日期 2012.10.22
申请人 三菱化学株式会社 发明人 藤澤 英夫;三川 豊;鎌田 和典
分类号 C30B29/38 主分类号 C30B29/38
代理机构 代理人
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