发明名称 PROCESS FOR PRODUCING INTEGRATED SOLAR CELL
摘要 <p>A process for producing an integrated solar cell comprising deposited unit cells having a p-i-n junction, with an n-type layer forming an n-p junction between unit cells comprising a microcrystalline amorphous silicon layer, in which said microcrystalline amorphous silicon layer is subjected to a hydrogen discharge treatment for a given period of time. By the hydrogen discharge treatment, the film resistance of the n-type layer is reduced to accelerate ohmic property with a p-type layer thereby achieving increased conversion efficiency.</p>
申请公布号 EP0559143(A3) 申请公布日期 1993.10.06
申请号 EP19930103295 申请日期 1993.03.02
申请人 SHOWA SHELL SEKIYU KABUSHIKI KAISHA 发明人 SICHANUGRIST, PORPONTH;NII, TETSURO
分类号 H01L31/04;H01L31/075;H01L31/20;(IPC1-7):H01L31/075 主分类号 H01L31/04
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