发明名称 |
PROCESS FOR PRODUCING INTEGRATED SOLAR CELL |
摘要 |
<p>A process for producing an integrated solar cell comprising deposited unit cells having a p-i-n junction, with an n-type layer forming an n-p junction between unit cells comprising a microcrystalline amorphous silicon layer, in which said microcrystalline amorphous silicon layer is subjected to a hydrogen discharge treatment for a given period of time. By the hydrogen discharge treatment, the film resistance of the n-type layer is reduced to accelerate ohmic property with a p-type layer thereby achieving increased conversion efficiency.</p> |
申请公布号 |
EP0559143(A3) |
申请公布日期 |
1993.10.06 |
申请号 |
EP19930103295 |
申请日期 |
1993.03.02 |
申请人 |
SHOWA SHELL SEKIYU KABUSHIKI KAISHA |
发明人 |
SICHANUGRIST, PORPONTH;NII, TETSURO |
分类号 |
H01L31/04;H01L31/075;H01L31/20;(IPC1-7):H01L31/075 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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