| 摘要 |
PURPOSE:To improve reproducibility by a method wherein Al2GaAs whose AlAs composition ratio is in a specified range is used as a clad layer, AlGaAs whose AlAs composition ratio is larger than or equal to a constant value is used as an etching blocking layer, and a ridge is formed by using etching solution composed of organic acid and hydrogen peroxide. CONSTITUTION:On a semiconductor substrate 1, at least the following are crystal-grown in order; a first conductivity type lower side clad layer 2, an active layer 3, a second conductivity type first upper side clad layer 4 composed of AlGaAs whose AlAs composition ratio is in the range of 0.38-0.6, an etching blocking layer 5a composed of AlGaAs whose AlAs composition ratio is larger than or equal to 0.6, and a second conductivity type second upper side clad layer 6 composed of AlGaAs whose AlAs composition ratio is in the range of 0.38-0.6. A ridge is formed by etching using etching solution composed of organic acid and hydrogen peroxide. A device having a desirable laser structure is manufactured with excellent reproducibility, and a device wherein the beam spreading angle is narrow can be realized. |
