| 摘要 |
PURPOSE:To analyze the degree of orientation of a crystalline phase of even a thin surface layer by setting the angle of incidence of X-rays to a sample to be so small as to obtain only the diffraction line by the surface layer. CONSTITUTION:When monochromatic X-rays of good parallelism are cast to a thin film on a substrate, the X-rays are elastically scattered at the crystalline surface of the surface layer or in the base material and observed only in a peculiar direction 2theta to the crystalline phase and the crystalline surface among the incident X-rays. When the angle of incidence alpha is made large, the intensity of a diffraction circle by the crystalline surface in the base material becomes larger as compared with that of a diffraction circle by the crystalline surface in the surface layer, and consequently the diffraction circle by the crystalline surface in the surface layer is hidden. The angle of incidence alpha should accordingly be set to be small in order to obtain the diffraction circle by the crystalline surface in the surface layer. For this purpose, the X-rays are turned to X-rays of good parallelism through a single aperture collimator 11, and brought into a flat sample 13 with small angles whereby only the diffraction line by the surface layer is obtained. The X-rays are diffracted by the sample 13 and caught as a diffraction circle by a film 12. Accordingly, the degree of orientation of the crystalline phase is analyzed. |
