| 摘要 |
<p>PURPOSE:To prevent the change in the characteristics of TFT by covering the exposed parts at the boundary of a first amorphous silicon film and a second amorphous silicon film with a semiconductor protective layer consisting of a material different from the material of the amorphous silicon film. CONSTITUTION:The amorphous silicon active layer 18 and the amorphous silicon contact layer 20 of an N<-> type are laminated on an SiNi film 15 and the semiconductor protective layer 19 consisting of SiNx is provided between the a-Si layer 18 and the N<+> a-Si layer 20 corresponding to the channel. The regions where the a-Si layer 18 is exposed are provided at two points in order to attain the contact of the N a-Si layer 20 and the a-Si layer 18. The N<+> a-Si layer 20 extends onto the semiconductor protective layer 19 which covers the apertures exposed with the a-Si layer 18 and is fully flat on the circumference. The circumference at the boundary of the a-Si layer 18 and the N<+> a-Si layer 20 is completely covered with the semiconductor protective layer 19 if the device is constituted in such a manner, and therefor, the parts where the coverage is degrades are not exposed.</p> |
