| 摘要 |
<p>PURPOSE:To provide a semiconductor laser device which can be highly integrated and can also carry out APC for each laser diode independently. CONSTITUTION:A semiconductor laser device is composed of an InGaAsP active layer 5, p-InP cladding layers 9 and 11, an n-InP cladding layer 8, a p-InP block layer 4, an n-InP block layer 3 and a p-InGaAsP cap layer 7. One side of the InGaAsP active layer 5 is used as a monitor beam output surface 13, and a light reflection film 12 is laid on the other side of the active layer. A reflectivity reduction film 2 is disposed in order to improve the output of the beam from the output surface 13 and, simultaneously, to reduce reflection occurring on a light receiving surface of a light detection area.</p> |
