| 摘要 |
PURPOSE:To obtain a semiconductor light emitting element the output per one chip of which can be increased by forming light emitting elements having p-n or pin junctions on both surfaces of a conductive substrate and causing the p-n or pin junctions to emit light. CONSTITUTION:A p-type GaAs buffer layer 2, p-type AlGaAs clad layer 3, i-type AlGaAs active layer 4, n-type AlGaAs clad layer 5, and n-type GaAs contact layer 6 are successively grown by an MOCVD method on both surfaces of a p-GaAs substrate 1. Then a ridge structure 7 having a 5mum width and step 8 for forming electrodes on the substrate 1 are formed by chemical etching and an SiO2 film 9 constituting an insulating layer is formed by a sputtering method. In addition, an AuGe film which becomes an n-type electrode 10 and AuCr film which becomes a p-type electrode 11 are formed by a vacuum deposition method. Therefore, when this product is applied to an LD, a semiconductor light emitting element which can outputs a higher optical output as compared with the conventional element having the same size can be obtained. |
