| 摘要 |
PURPOSE:To reduce the fluctuation of light emitting outputs from each light emitting section. CONSTITUTION:An epitaxial layer 12 is provided on an n-type compound semiconductor substrate 11 and, in the layer 12, the central p-n junction surface of each light emitting section is projected in the direction opposite to the light- emitting surface and a p-type diffusion area 13 which is nearly parallel to the surface of the substrate 11 is provided at the p-n junction surface around the central p-n junction surface, with each area 13 being separated from another by means of a groove 14. The surface of the layer 12 is coated with a surface protective film 15 and the film 15 gets into the grooves 14. In addition, p-type electrodes 16 are vapor deposited on the light emitting surfaces of the areas 13 and an n-type electrode 17 is vapor-deposited on the rear surface of the substrate 11. |
