FORMING METHOD FOR INVERTED MASK PATTERN DATA FOR BEAM EXPOSURE

摘要

PURPOSE:To improve a life of a beam generator and a throughput of a photomask by beam exposing based on inverted mask pattern data obtained by calculating exclusive OR of blanking pattern data and mask pattern data. CONSTITUTION:Blanking data 50 is formed from one of binary values of a chip region *41 covering a chip pattern and peripheral regions *42a-*42c covering a peripheral pattern in a mask region and the other of binary values of the residual region. Further, data of mask pattern *30 is formed from one of binary values of a chip pattern *31 and peripheral patterns *32a-32c and the other of binary values of the residual region. An exclusive OR of blanking pattern data and mask pattern data is calculated to obtain an inverted mask pattern data 60. When beam exposure is conducted based on the data 60, a life of a beam generator and a throughput of manufacturing the photomask are improved.