发明名称 INFRARED GAS SENSOR
摘要 <p>PURPOSE:To downsize a sample cell of an infrared gas sensor and reduce its weight and also to enable execution of a highly-sensitive analysis. CONSTITUTION:A groove to serve as a gas flow passage is formed in the surface of each of two single-crystal silicon plates by etching. This groove is disposed in the shape of U or a semiellipse, the two silicon plates are stuck together and thereby a sample cell 11 is obtained. In the sample cell 11, gas flow passages 12A and 12B are formed by the grooves. Infrared rays are applied to the gas flow passages 12A and 12B and a detector 16 executes analysis of a gas component on the basis of absorption thereof. The sample cell 11 is made of silicon and, therefore, it is easy to make the sensor small in size and light in weight.</p>
申请公布号 JPH0634543(A) 申请公布日期 1994.02.08
申请号 JP19920208386 申请日期 1992.07.13
申请人 MITSUBISHI MATERIALS CORP 发明人 SUGIHARA TADASHI;TANAKA HISAO
分类号 G01N21/3504;G01N21/35;G01N21/61;(IPC1-7):G01N21/61 主分类号 G01N21/3504
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