| 摘要 |
PURPOSE:To realize a constitution having an n-type or p-type conductivity and a function which is similar to an electronics device of a bulk by preparing two or more kinds of atomic species and by adjusting an atomic ratio not to make a sum of a valence thereof zero. CONSTITUTION:Insulating Si is used for a substrate. Atomic operation is performed by an STM-like manipulator for Ga atom 33 and As atom 31 whose about 10% is displaced with Se atom 32. If a valence of Ga is +3, a valence of As is -3 and a valence of Se which is formed by displacing about 10% of As is -2, a sum of valence per unit cell is +0.1. This atomic fine line shows an n-type conductivity. Similarly, in a fine line basically consisting of M0S2, wherein about 50% of S atom is displaced with P atom, a valence of Mo atom is +4, a valence of S atom is -2 and a valence 6f P atom is -3, and a sum of valence of a unit cell at average is -1, thus realizing an atomic fine line of a hole conductivity. |
