| 摘要 |
<p>PURPOSE:To provide an electron emission element allowing no occurrence of heat destruction accompanying the increase of electric field strength. CONSTITUTION:A gate electrode 15 has a double layer structure. A lower layer is a WSi layer 13 having a thermal expansion coefficient of 8.4X10<-6>, and an upper layer is a SiN layer 14 having the thermal expansion coefficient of 2.2X10<-6>. Since the thermal expansion coefficient of the lower layer is large, when the electric field of a field emission tip 17 and the gate electrode 15 is increased, the gate electrode 15 is heated so that the gate electrode 15 bends upward. Thereby it is possible to prevent the destruction of an electron emission element.</p> |
