| 摘要 |
PURPOSE:To enable effective absorption of incident light and to improve productivity of a solar battery. CONSTITUTION:This amorphous silicon solar battery 10 is different from a conventional amorphous silicon solar battery in respects that irregularities are formed on a surface (a surface at the side of an n-layer 14) of an oxide semiconductor layer 13 and that height difference between a top and a bottom of the irregularities is from 1000 to 5000Angstrom . That is, in the amorphous silicon solar battery 10, a surface of a lower electrode 12 is smooth and light confinement is performed by forming irregularities on a surface of the oxide semiconductor layer 13. Meanwhile, suitable height of irregularities (height difference between a top and a bottom thereof) on a surface of the oxide semiconductor layer 13 for most effective light confinement is 1000 to 5000Angstrom . |
