| 摘要 |
PURPOSE:To provide a semiconductor device having satisfactorily a function as two optical elements by a method wherein a groove is formed under a second semiconductor layer having a large shape as compared with a window as viewed at its inside upper edge and the second semiconductor layer is extended on a third semiconductor layer so as to come into contact with it. CONSTITUTION:A groove 12 whose cross section is an inverted trapezoid in a position corresponding to a window 11 in a semiconductor layer 3 is formed in a semiconductor layer 2 so as to have a depth reaching a semiconductor layer 6 in such a way that its inner upper edge is situated under the semiconductor layer 3. At the inside of the groove 12 in the semiconductor layer 2, a semiconductor layer 13 as a current-blocking layer composed of the same material (InP) as a semiconductor layer 7 is formed, by an epitaxial growth method, so as to have a thickness in which the surface becomes a height nearly equal to the surface of the semiconductor layer 7. In this case, the semiconductor layer 13 is formed to be a state that semiconductor layers 14L, 14R of the same material as the semiconductor layer 13 are extended continuously to the semiconductor layer 3 in both side positions sandwiching a mask 10. Thereby, it is possible to obtain a function as two optical elements. |
