| 摘要 |
PURPOSE: To almost exclude the existence of a light scattered defects by allowing rare earth orthosilicate to grow from the melted mixture of component oxides in an inert atmosphere containing oxygen of a specific concentration by using Czochralski technology. CONSTITUTION: Rare earth orthosilicate obtained by doping rare earths, preferably Ln2-x REx SiO5 crystal (x is <=0.3), is allowed to grow from the melted mixture of component oxides by using Czochralski technology. At the time, a concentration of oxygen of about 300 to 9,000 ppm is contained in an inert atmosphere surrounding the crystal which is maintained on the melt and drawn up from the melt. A furnace 1 used for the growth of the Ln2-x REx SiO5 crystal includes an iridium crucible 2, which is put on a ZrO2 board 3 and the board 3 is arranged on a ZrO2 mount 4. The method can reduce the density of light scattered defect sites. |
