发明名称 |
Magnetic Tunnel Junctions, Methods Used While Forming Magnetic Tunnel Junctions, And Methods Of Forming Magnetic Tunnel Junctions |
摘要 |
A method used while forming a magnetic tunnel junction comprises forming non-magnetic tunnel insulator material over magnetic electrode material. The tunnel insulator material comprises MgO and the magnetic electrode material comprises Co and Fe. B is proximate opposing facing surfaces of the tunnel insulator material and the magnetic electrode material. B-absorbing material is formed over a sidewall of at least one of the magnetic electrode material and the tunnel insulator material. B is absorbed from proximate the opposing facing surfaces laterally into the B-absorbing material. Other embodiments are disclosed, including magnetic tunnel junctions independent of method of manufacture. |
申请公布号 |
US2016301001(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201514684110 |
申请日期 |
2015.04.10 |
申请人 |
Micron Technology, Inc. |
发明人 |
Sandhu Gurtej S. |
分类号 |
H01L43/10;H01L43/08;H01L43/12;H01L43/02 |
主分类号 |
H01L43/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Boise ID US |