发明名称 |
NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region. |
申请公布号 |
US2016300978(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201615190406 |
申请日期 |
2016.06.23 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
KIM Jung Sub;SEO Yeon Woo;LEE Dong Gun;CHUNG Byung Kyu;CHUN Dae Myung;CHOI Soo Jeong |
分类号 |
H01L33/00;H01L33/52;H01L33/24;B82Y20/00;H01L33/06;H01L33/08 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-si KR |