SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE:To reduce the dispersion in threshold value voltage between bits due to the excessive erasure of the flash EEPROM semiconductor memory within a short time. CONSTITUTION:A transfer circuit 11 is annexed to a bit line 4 conventionally connected to a column decoder only to control input signals thereby enabling the bit line 4 to be connected to a Vcc power supply while the dispersion in threshold value voltage between bits can be cancelled within shorter time than that when a source 10 is impressed with a stress by impressing the whole bit line 4 (drain 9) with the dispersed threshold value voltage due to excessive erasure simultaneously with the stress.