| 发明名称 |
GA2O3-BASED SEMICONDUCTOR ELEMENT |
| 摘要 |
A Ga2O3-based semiconductor element includes an undoped β-Ga2O3 single crystal film disposed on a surface of a β-Ga2O3 substrate, a source electrode and a drain electrode disposed on a same side of the undoped β-Ga2O3 single crystal film, a gate electrode disposed on the undoped β-Ga2O3 single crystal film between the source electrode and the drain electrode, and a region formed in the undoped β-Ga2O3 single crystal film under the source electrode and the drain electrode and including a controlled dopant concentration. |
| 申请公布号 |
US2016300953(A1) |
申请公布日期 |
2016.10.13 |
| 申请号 |
US201615182668 |
申请日期 |
2016.06.15 |
| 申请人 |
TAMURA CORPORATION |
发明人 |
Sasaki Kohei;Higashiwaki Masataka |
| 分类号 |
H01L29/786;H01L29/04;H01L29/417;H01L29/36;H01L29/24 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A Ga2O3-based semiconductor element, comprising:
an undoped β-Ga2O3 single crystal film disposed on a surface of a β-Ga2O3 substrate; a source electrode and a drain electrode disposed on a same side of the undoped β-Ga2O3 single crystal film; a gate electrode disposed on the undoped β-Ga2O3 single crystal film between the source electrode and the drain electrode; and a region formed in the undoped β-Ga2O3 single crystal film under the source electrode and the drain electrode and including a controlled dopant concentration. |
| 地址 |
Tokyo JP |
