SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

摘要

Semiconductor devices and methods of fabricating the same are provided. The methods of fabricating the semiconductor devices may include providing a substrate including an active pattern protruding from the substrate, forming a first liner layer and a field isolating pattern on the substrate to cover a lower portion of the active pattern, forming a second liner layer on an upper portion of the active pattern and the field isolation pattern, and forming a dummy gate on the second liner layer.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
providing a substrate including an active pattern protruding from the substrate; forming a first liner layer on the substrate to cover the active pattern; forming a field isolation insulating layer on the first liner layer; etching the field isolation insulating layer and the first liner layer to form a field isolation pattern that exposes an upper portion of the active pattern and covers a lower portion of the active pattern; forming a second liner layer on the upper portion of the active pattern and the field isolation pattern; forming a dummy gate on the second liner layer and crossing the active pattern; forming spacer patterns on sidewalls of the dummy gate and the second liner layer; etching the second liner layer which is formed on the active pattern and is not covered by the dummy gate and the spacer patterns; forming an interlayer insulating layer on the field isolation pattern and the active pattern at opposite sides of the dummy gate; forming an opening in the interlayer insulating layer by removing the dummy gate; forming a gate insulating pattern in the opening; and forming a gate pattern on the gate insulating pattern in the opening.