| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first fin-shaped structure thereon; forming a spacer adjacent to the first fin-shaped structure; using the spacer as mask to remove part of the substrate for forming a second fin-shaped structure, in which the second fin-shaped structure comprises a top portion and a bottom portion; and forming a doped portion in the bottom portion of the second fin-shaped structure. |
| 申请公布号 |
US2016300942(A1) |
申请公布日期 |
2016.10.13 |
| 申请号 |
US201514703904 |
申请日期 |
2015.05.05 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Feng Li-Wei;Tsai Shih-Hung;Lin Chao-Hung;Hsu Chih-Kai;Hung Yu-Hsiang;Jenq Jyh-Shyang |
| 分类号 |
H01L29/78;H01L21/324;H01L21/02;H01L29/167;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate having a first fin-shaped structure thereon; forming a spacer adjacent to the first fin-shaped structure; using the spacer as mask to remove part of the substrate for forming a second fin-shaped structure, wherein the second fin-shaped structure comprises a top portion and a bottom portion; and forming a doped portion in the bottom portion of the second fin-shaped structure. |
| 地址 |
Hsin-Chu City TW |
